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3年
企业信息

深圳市辉之阳实业有限公司

卖家积分:3001分-4000分

营业执照:已审核

经营模式:贸易/代理/分销

所在地区:广东 深圳

人气:86162
企业档案

相关证件:营业执照已审核 

会员类型:

会员年限:3年

陈经理 QQ:2881956550

电话:075523245236

手机:13574854884

龙经理 QQ:2881956552

电话:075523245236

手机:13574854884

陈经理 QQ:2077339677

电话:075523245236

手机:13574854884

阿库IM:

地址:深圳市宝安区西乡街道固戍社区海滨新村碧湾路东1号碧湾大厦705

E-mail:2077339677@qq.com

供应DRV8701ERGER
供应DRV8701ERGER
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DRV8701ERGER

型号/规格:

DRV8701ERGER

品牌/商标:

TI/德州仪器

封装:

VQFN-24

批号:

21+

产品信息

Single H-Bridge Gate Driver • Industrial Brushed-DC Motors – Drives Four External N-Channel MOSFETs • Robotics – Supports 100% PWM Duty Cycle • Home Automation • 5.9-V to 45-V Operating Supply Voltage Range • Industrial Pumps and Valves • Two Control Interface Options • Power Tools – PH/EN (DRV8701E) • Handheld Vacuum Cleaners – PWM (DRV8701P) 3 Description • Adjustable Gate Drive (5 Levels) The DRV8701 is a single H-bridge gate driver that – 6-mA to 150-mA Source Current uses four external N-channel MOSFETs targeted to – 12.5-mA to 300-mA Sink Current drive a 12-V to 24-V bidirectional brushed DC motor. • Supports 1.8-V, 3.3-V, and 5-V Logic Inputs A PH/EN (DRV8701E) or PWM (DRV8701P) • Current Shunt Amplifier (20 V/V) interface allows simple interfacing to controller circuits. An internal sense amplifier allows for • Integrated PWM Current Regulation adjustable current control. The gate driver includes – Limits Motor Inrush Current circuitry to regulate the winding current using fixed • Low-Power Sleep Mode (9 μA) off-time PWM current chopping. • Two LDO Voltage Regulators to Power External DRV8701 drives both high- and low-side FETs with Components 9.5-V VGS gate drive. The gate drive current for all – AVDD: 4.8 V, up to 30-mA Output Load external FETs is configurable with a single external resistor on the IDRIVE pin. – DVDD: 3.3 V, up to 30-mA Output Load • Small Package and Footprint A low-power sleep mode is provided which shuts down internal circuitry to achieve very-low quiescent – 24-Pin VQFN (PowerPAD™) current draw. This sleep mode can be set by taking – 4.0 × 4.0 × 0.9 mm the nSLEEP pin low. • Protection Features: Internal protection functions are provided: – VM Undervoltage Lockout (UVLO) undervoltage lockout, charge pump faults, – Charge Pump Undervoltage (CPUV) overcurrent shutdown, short-circuit protection, predriver faults, and overtemperature. Fault – Overcurrent Protection (OCP) conditions are indicated on the nFAULT pin. – Pre-Driver Fault (PDF) – Thermal Shutdown (TSD) Device Information(1) – Fault Condition Output (nFAULT)